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PDF FMA246 Data sheet ( Hoja de datos )
| Número de pieza | FMA246 | |
| Descripción | HIGH GAIN X-BAND MMIC AMPLIFIER | |
| Fabricantes | Filtronic Compound Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FMA246 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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HIGH GAIN X-BAND MMIC AMPLIFIER
FMA246
Preliminary Datasheet v3.0
FEATURES:
• 8.0 – 14.0 GHz Operating Bandwidth
• 2.5 dB Noise Figure
• 30 dB Small-Signal Gain
• 19 dm Output Power
• +6V Single Bias Supply
• Adjustable Operating Current
• DC De-coupled Input and Output Ports
www.DataSheet4U.com
GENERAL DESCRIPTION:
The FMA246 is a 3-stage, reactively matched
pHEMT high-gain MMIC amplifier designed for
use over the 8 to 14 GHz bandwidth. The
supply voltage can be varied from +3V to +6V
if needed. Operating current can be adjusted
using the source resistor ladders located along
the bottom edge, by bonding a particular pad
to ground. The amplifier is unconditionally
stable over all load states (-45 to +85°C), and
conditionally stable if the input port is open-
circuited.
LAYOUT:
TYPICAL APPLICATIONS:
• Low noise front end amplifiers
• General X-Band gain block
ELECTRICAL SPECIFICATIONS1:
PARAMETER
SYMBOL
Operating Frequency Bandwidth
BW
Small Signal Gain
S21
CONDITIONS
VDD = +6 V IDD ≈ 60% IDSS
MIN
8
27
TYP
N/A
29
MAX
14
31
UNITS
GHz
dB
Operating Current
Small Signal Gain Flatness
Noise Figure
3rd Order Intermodulation Distortion
Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
IOP
ΔS21
NF
IMD
P1dB
S11
S22
S12
VDD = +6V
2
VDD = +6 V IDD ≈ 60% IDSS
2
VDD = +6 V IDD ≈ 60% IDSS
2
VDD = +6 V IDD ≈ 60% IDSS
POUT = +9 dBm SCL
2
VDD = +6 V IDD ≈ 60% IDSS
2
VDD = +6 V IDD ≈ 60% IDSS
2
VDD = +6 V IDD ≈ 60% IDSS
2
VDD = +6 V IDD ≈ 60% IDSS
105
150 195
mA
± 0.6
± 1.0
dB
-
2.5 2.8
dB
- -44 - dBc
18 20 - dBm
-
-10 -8
dB
-
-16 -9
dB
-
-60 -50
dB
Note: 1. TAmbient = 22°C; Continuous operation at IDSS is not recommended
2. 60%IDSS is achieved by bonding pads "D", "G", and "K" (shown on page 2) to ground to drive the 1st,
2nd and 3rd stage amplifiers at 50%IDSS, 50%IDSS, and 75%IDSS respectively.
Tel: +44 (0) 1325 301111
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
1 page  
PREFERRED ASSEMBLY INSTRUCTIONS:
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
The back of the die is metallised and the
recommended mounting method is by the use
of conductive epoxy. Epoxy should be applied
www.DataSheet4U.ctoom the attachment surface uniformly and
sparingly to avoid encroachment of epoxy on
to the top face of the die and ideally should not
exceed half the chip height. For automated
dispense Ablestick LMISR4 is recommended
and for manual dispense Ablestick 84-1 LMI or
84-1 LMIT are recommended. These should
be cured at a temperature of 150°C for 1 hour
in an oven especially set aside for epoxy
curing only. If possible the curing oven should
be flushed with dry nitrogen. For eutectic die
attach the maximum time at 280-300°C is 60
seconds, and should be kept to a minimum.
This part has gold (Au) bond pads requiring
the use of gold (99.99% pure) bondwire. It is
recommended that 25.4μm diameter gold wire
be used. Recommended lead bond technique
is thermocompression wedge bonding with
0.001” (25µm) diameter wire. The bond tool
force shall be 35-38 gram. Bonding stage
temperature shall be 230-240°C, heated tool
(150-160°C) is recommended. Ultrasonic or
thermosonic bonding is not recommended.
Bonds should be made from the die first and
then to the mounting substrate or package.
The physical length of the bondwires should be
minimised especially when making RF or
ground connections.
FMA246
Preliminary Datasheet v3.0
HANDLING
PRECAUTIONS:
To avoid damage to the devices care should
be exercised during handling. Proper
Electrostatic Discharge (ESD) precautions
should be observed at all stages of storage,
handling, assembly, and testing. These
devices should be treated as Class 0 (0-250 V)
as defined in JEDEC Standard No. 22-A114.
Further information on ESD control measures
can be found in MIL-STD-1686 and MIL-
HDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including S-
parameters, noise parameters and device
model are available on request.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
ORDERING INFORMATION:
PART NUMBER
DESCRIPTION
FMA246
Die
Tel: +44 (0) 1325 301111
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
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| PDF Descargar | [ Datasheet FMA246.PDF ] | |
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