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Advanced Semiconductor - UHF POWER LDMOS TRANSISTOR

Numéro de référence BLF861A
Description UHF POWER LDMOS TRANSISTOR
Fabricant Advanced Semiconductor 
Logo Advanced Semiconductor 





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BLF861A fiche technique
BLF861A
UHF POWER LDMOS TRANSISTOR
DESCRIPTION:
The ASI BLF861A ia a Silicon N-
channel enhancement mode lateral D-
MOS push-pull transistor.
www.DataSFhEeeAt4TUU.coRmES:
Internal input-output matching
Omnigold™ Metalization System
MAXIMUM RATINGS
ID 18 A
VDS 65 V
VGS ±15 V
PDISS
318 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 0.55 °C/W
PACKAGE STYLE .385X.850 4LFG
1 & 2 = DRAIN 3 & 4 = GATE
5 = SOURCE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVDSS
ID = 1.5 mA
IDSS VDS = 32 V VGS = 0 V
IDSX VDS = 10 V VGS = VGSth + 9 V
IGSS
VDS = 0 V
VGS = ±15 V
VGS(th)
ID = 150 mA
VDS = 10 V
RDS(on)
ID = 4.0 A
VGS = VGSth + 9 V
gfs ID = 4.0 A
VDS = 10 V
Ciss
Coss
Crss
VDS = 32 V
VGS = 0 V
f = 1.0 MHz
Gp VDS = 32 V Pout = 150 W f = 860 MHz
ηD
MINIMUM
65
18
4.0
13.5
50
TYPICAL MAXIMUM
2.2
25
5.5
160
4.0
82
40
6.0
14.5
UNITS
V
µA
A
nA
V
m
S
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

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