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NXP Semiconductors - PHF9NQ20T

Numéro de référence 9NQ20T
Description PHF9NQ20T
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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9NQ20T fiche technique
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHX9NQ20T , PHF9NQ20T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
d
g
VDSS = 200 V
ID = 5.2 A
RDS(ON) 400 m
www.DataSheet4U.com
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GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package
PINNING
SOT186A (FPAK)
SOT186 (FPAK)
PIN DESCRIPTION
1 gate
case
case
2 drain
3 source
case isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
5.2
3.3
21
25
150
UNIT
V
V
V
A
A
A
W
˚C
November 2000
1
Rev 1.100

PagesPages 9
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