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PDF UFT30-28 Data sheet ( Hoja de datos )
| Número de pieza | UFT30-28 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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UFT30-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The UFT30-28 is Designed for Class
A and B Power Ampliifiers Operating
up to 500 MHz.
www.DataSheet4U.com
FEATURES:
• PG = 7.0 dB min. at 25 W/400 MHz
• ηD = 60 % Typical
• Omnigold™ Metalization System
MAXIMUM RATINGS
ID 5.0 A
VDDS
65 V
VGS
PDISS
TJ
TSTG
θJC
±40 V
100 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.8 OC/W
PACKAGE STYLE .380 4L FLG.
.112 x 45°
B
S
A
D
Ø.125 NOM.
FULL R
J
.125
GS
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10666
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
VDSS
IDS = 10 mA
IDSS VDS = 28 V
IGSS
VGS = 20 V
VGS VDS = 10 V
ID = 25 mA
GFS VDS = 10 V
ID = 500 mA
MINIMUM TYPICAL MAXIMUM
60
4.0
1.0
1.0 6.0
500
UNITS
V
mA
µA
V
mMho
CISS
COSS
CRSS
VDS = 28 V
VGS = 0 V
f = 1.0 MHz
46
33
6.0
pF
PG
VDD = 28 V
IDQ = 25 mA
POUT = 25 W
7.0
ηD f = 400 MHz
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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