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Vishay Siliconix - Power MOSFET ( Transistor )

Numéro de référence IRFR9020
Description Power MOSFET ( Transistor )
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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IRFR9020 fiche technique
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 50
VGS = - 10 V
14
6.5
6.5
Single
0.28
S
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
D
P-Channel MOSFET
FEATURES
• Surface Mountable (Order As IRFR9020,
SiHFR9020)
• Straight Lead Option (Order As IRFU9020,
SiHFU9020)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt.
The power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of power
MOSFET’s to high volume applications where PC board
surface mounting is desirable. The surface mount option
IRFR9020, SiHFR9020 is provided on 16mm tape. The
straight lead option IRFU9020, SiHFU9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
DPAK (TO-252)
SiHFR9020-GE3
Lead (Pb)-free
Note
a. See device orientation.
IRFR9020PbF
SiHFR9020-E3
DPAK (TO-252)
SiHFR9020TR-GE3a
IRFR9020TRPbFa
SiHFR9020T-E3a
DPAK (TO-252)
SiHFR9020TRL-GE3a
IRFR9020TRLPbFa
SiHFR9020TL-E3a
IPAK (TO-251)
SiHFU9020-GE3
IRFU9020PbF
SiHFU9020-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).
b. VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, Rg = 25 , Peak IL = - 9.9 A
c. ISD - 9.9 A, dI/dt -120 A/μs, VDD 40 V, TJ 150 °C.
d. 0.063" (1.6 mm) from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 50
± 20
- 9.9
- 6.3
- 40
0.33
250
- 9.9
4.2
42
5.8
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0169-Rev. D, 04-Feb-13
1
Document Number: 90350
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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