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IRFU420 fiches techniques PDF

Vishay Siliconix - Power MOSFET ( Transistor )

Numéro de référence IRFU420
Description Power MOSFET ( Transistor )
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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IRFU420 fiche technique
www.vishay.com
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
19
3.3
13
Single
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
3.0
GS
GD S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR420, SiHFR420)
• Straight Lead (IRFU420, SiHFU420)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR420-GE3
IRFR420PbF
SiHFR420-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR420TR-GE3a
IRFR420TRPbFa
SiHFR420T-E3a
DPAK (TO-252)
SiHFR420TRL-GE3a
IRFR420TRLPbFa
SiHFR420TL-E3a
DPAK (TO-252)
SiHFR420TRR-GE3a
IRFR420TRRPbFa
-
IPAK (TO-251)
SiHFU420-GE3
IRFU420PbF
SiHFU420-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 124 mH, Rg = 25 , IAS = 2.4 A (see fig. 12).
c. ISD 2.4 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
LIMIT
500
± 20
2.4
1.5
8.0
0.33
0.020
400
2.4
4.2
42
2.5
3.5
- 55 to + 150
260
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0168-Rev. D, 04-Feb-13
1
Document Number: 91275
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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