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IRFR224 fiches techniques PDF

Vishay Siliconix - Power MOSFET ( Transistor )

Numéro de référence IRFR224
Description Power MOSFET ( Transistor )
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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IRFR224 fiche technique
www.vishay.com
IRFR224, IRFU224, SiHFR224, SiHFU224
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
250
VGS = 10 V
14
2.7
7.8
Single
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
1.1
GS
GD S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR224, SiHFR224)
• Straight Lead (IRFU224, SiHFU224)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave solderig techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHFR224-GE3
IRFR224PbF
SiHFR224-E3
DPAK (TO-252)
SiHFR224TR-GE3
IRFR224TRPbFa
SiHFR224T-E3a
DPAK (TO-252)
SiHFR224TRL-GE3
IRFR224TRLPbFa
SiHFR224TL-E3a
IPAK (TO-251)
SiHFU224-GE3
IRFU224PbF
SiHFU224-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V; starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 3.8 A (see fig. 12).
c. ISD 3.8 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
250
± 20
3.8
2.4
15
0.33
0.020
130
3.8
4.2
42
2.5
4.8
- 55 to + 150
260
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0165-Rev. C, 04-Feb-13
1
Document Number: 91271
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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