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IRFR1N60A fiches techniques PDF

Vishay Siliconix - Power MOSFET ( Transistor )

Numéro de référence IRFR1N60A
Description Power MOSFET ( Transistor )
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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IRFR1N60A fiche technique
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Max.) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
14
2.7
8.1
Single
7.0
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
S
G
GD S
S
N-Channel MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• Power Factor Correction
TYPICAL SMPS TOPOLOGIES
• Low Power Single Transistor Flyback
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and
Halogen-free
SiHFR1N60A-GE3
Lead (Pb)-free
IRFR1N60APbF
SiHFR1N60A-E3
DPAK (TO-252)
SiHFR1N60ATRL-GE3a
IRFR1N60ATRLPbFa
SiHFR1N60ATL-E3a
DPAK (TO-252)
SiHFR1N60ATR-GE3a
IRFR1N60ATRPbFa
SiHFR1N60AT-E3a
DPAK (TO-252)
SiHFR1N60ATRR-GE3a
IRFR1N60ATRRPbFa
SiHFR1N60ATR-E3a
IPAK (TO-251)
SiHFU1N60A-GE3
IRFU1N60APbF
SiHFU1N60A-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
LIMIT
600
± 30
1.4
0.89
5.6
0.28
93
1.4
3.6
36
3.8
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 95 mH, Rg = 25 , IAS = 1.4 A (see fig. 12).
c. ISD 1.4 A, dI/dt 180 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
S13-0171-Rev. D, 04-Feb-13
1
Document Number: 91267
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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