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Número de pieza | CHA7114 | |
Descripción | X Band High Power Amplifier | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHA7114 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! CHA7114
X Band High Power Amplifier
GaAs Monolithic Microwave IC
Description
www.DataSheet4U.comThe CHA7114 is a monolithic two-stage
GaAs high power amplifier designed for X
band applications.
This device is manufactured using a UMS
0.25 µm power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
• The backside of the chip is both RF and
DC grounded
• Bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermo-compression
bonding process.
Main Features
0.25µm Power pHEMT Technology
8.5–11.5GHz Frequency Range
8W Output Power @ 4dBc
High PAE: > 40% @ 4dBc
20dB nominal Gain
Quiescent Bias point: Vd = 8V, Id = 2A
Chip size: 4.41mm x 3.31mm x 0.07mm
Vg2 Vd2
Vg1 Vd1
IN
Vg1 Vd1
OUT
Vg2 Vd2
50
45
PAE @ 4dBc
40
Pout @ 4dBc
35
30
25
20 Linear Gain
15
Pulse : 25µs 10%
10
8 8,5 9 9,5 10 10,5 11 11,5 12
Frequency (GHz)
Main Characteristics
Tamb = +25°C (Tamb is the back-side of the chip)
Vd = 8V, Id (Quiescent) = 2A, Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min
Top Operating temperature range
-40
Fop Operating frequency range
8.5
P_4dBc Output power @ 4dBc @ 25°C
G Small signal gain @ 25°C
Typ
8
20
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Max
+80
11.5
Unit
°C
GHz
W
dB
Ref : DSCHA7114-7347 - 13 Dec 07
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax : +33 (0) 1 69 33 03 09
1 page X band High Power Amplifier
CHA7114
www.DataSheet4U.com
41
39
37 8GHz
8.4GHz
35 8.8GHz
9.2GHz
33 9.6GHz
10GHz
31 10.4GHz
10.8GHz
29 11.2GHz
11.6GHz
27 12GHz
25
-1 0 1 2 3 4 5 6 7 8
Compression (dB)
Output Power @ 25°C versus compression and frequenc y
60
9
50
40
30
20
10
0
-1
0123456
Compression (dB)
PAE @ 25°C versus compression and frequency
8GHz
8.4GHz
8.8GHz
9.2GHz
9.6GHz
10GHz
10.4GHz
10.8GHz
11.2GHz
11.6GHz
12GHz
78
9
Ref : DSCHA7114-7347 - 13 Dec 07
5/8
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet CHA7114.PDF ] |
Número de pieza | Descripción | Fabricantes |
CHA7114 | X Band High Power Amplifier | United Monolithic Semiconductors |
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