|
|
PDF EM74xxx Data sheet ( Hoja de datos )
| Número de pieza | EM74xxx | |
| Descripción | 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
| Fabricantes | Emerging Memory & Logic Solutions | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EM74xxx (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
merging Memory & Logic Solutions Inc.
Document Title
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
www.DataShe0e.t14U.com
2’nd Draft Add Pb-free part number
EM610FV16 Series
Low Power, 64Kx16 SRAM
Draft Date
May 9 , 2003
February 13 , 2004
Remark
Emerging Memory & Logic Solutions Inc.
IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160
Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
1 page  
merging Memory & Logic Solutions Inc.
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
Input Pulse Level : 0.4 to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL = 100pF+ 1 TTL
CL1) = 30pF + 1 TTL
1. Including scope and Jig capacitance
2. R1=3070Ω, R2=3150Ω
www.DataShee3t4.UV.cToMm=2.8V
EM610FV16 Series
Low Power, 64Kx16 SRAM
VTM3)
R12)
CL1)
R22)
READ CYCLE (Vcc =2.7 to 3.6V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
55ns
Min Max
Read cycle time
tRC 55 -
Address access time
tAA - 55
Chip select to output
tco1, tco2
- 55
Output enable to valid output
tOE - 25
UB, LB acess time
tBA 55
Chip select to low-Z output
tLZ1, tLZ2
10 -
UB, LB enable to low-Z output
tBLZ 10 -
Output enable to low-Z output
tOLZ
5-
Chip disable to high-Z output
tHZ1, tHZ2
0 20
UB, LB disable to high-Z output
tBHZ
0 20
Output disable to high-Z output
tOHZ
0 20
Output hold from address change
tOH 10 -
70ns
Min Max
70 -
- 70
- 70
- 35
70
10 -
10 -
5-
0 25
0 25
0 25
10 -
WRITE CYCLE (Vcc =2.7 to 3.6V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
55ns
Min Max
70ns
Min Max
Write cycle time
tWC 55 - 70 -
Chip select to end of write
tCW1, tCW2 45 - 60 -
Address setup time
tAs 0 - 0 -
Address valid to end of write
tAW 45 - 60 -
UB, LB valid to end of write
tBW 45 - 60 -
Write pulse width
tWP 40 - 50 -
Write recovery time
tWR 0 - 0 -
Write to ouput high-Z
tWHZ
0 20 0 20
Data to write time overlap
tDW 25
30
Data hold from write time
tDH 0 - 0 -
End write to output low-Z
tOW 5 - 5 -
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
5 Page 
merging Memory & Logic Solutions Inc.
EM610FV16 Series
Low Power, 64Kx16 SRAM
MEMORY FUNCTION GUIDE
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
www.DataSheet4U2..coDmevice Type
3. Density
4. Option
5. Technology
6. Operating Voltage
1. Memory Component
2. Device Type
6 ------------------------ Low Power SRAM
7 ------------------------ STRAM
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
16 ----------------------- 16M
32 ----------------------- 32M
64 ----------------------- 64M
4. Option
0 ----------------------- Dual CS
1 ----------------------- Single CS
5. Technology
Blank ------------------ CMOS
F ------------------------ Full CMOS
6. Operating Voltage
Blank ------------------ 5.0V
V ------------------------- 2.7V~3.6V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
7. Orginzation
8 ---------------------- x8 bit
16 ---------------------- x16 bit
32 ---------------------- x32 bit
11. Power
10. Speed
9. Packages
8. Version
7. Orgainzation
8. Version
Blank ----------------- Mother Die
A ----------------------- First revision
B ----------------------- Second revision
C ----------------------- Third revision
D ----------------------- Fourth revision
9. Package
Blank ---------------------- FPBGA
S ---------------------------- 32 sTSOP1
T ---------------------------- 32 TSOP1
U ---------------------------- 44 TSOP2
W ---------------------------- Wafer
10. Speed
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
10 --------------------- 100ns
12 --------------------- 120ns
11. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power (Pb-free)
L ---------------------- Low Power
S ---------------------- Standard Power
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet EM74xxx.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EM74xxx | 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Emerging Memory & Logic Solutions |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |