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Numéro de référence | K15N60 | ||
Description | SKP15N60 | ||
Fabricant | Infineon | ||
Logo | |||
SKP15N60
SKW15N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
www.DataSheet4U.com- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-220-3-1
(TO-220AB)
• Very soft, fast recovery anti-parallel EmCon diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-21
(TO-247AC)
Type
SKP15N60
SKW15N60
VCE IC VCE(sat) Tj Marking Package
600V 15A
2.3V
150°C K15N60 PG-TO-220-3-1
600V 15A
2.3V
150°C K15N60 PG-TO-247-3-21
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
Value
600
31
15
62
62
Unit
V
A
31
15
62
±20
10
139
-55...+150
260
V
µs
W
°C
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2_1 Apr 06
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Pages | Pages 14 | ||
Télécharger | [ K15N60 ] |
No | Description détaillée | Fabricant |
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