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Numéro de référence | USM8J48 | ||
Description | AC POWER CONTROL APPLICATIONS | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM8G48,USM8G48,SM8J48,USM8J48
SM8G48A,USM8G48A,SM8J48A,USM8J48A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage
l R.M.S On−State Current
l Gate Trigger Current
: IGT = 30mA Max.
: IGT = 20mA Max. (“A”Type)
: VDRM = 400, 600V
: IT (RMS) = 8A
www.DataSheet4U.com
SM8G48, SM8J48, SM8G48A, SM8J48A
Unit: mm
USM8G48, USM8J48, USM8G48A, USM8J48A
JEDEC
JEITA
TOSHIBA
―
―
13-10J1A
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off-State Voltage
(U)SM8G48
(U)SM8G48A
(U)SM8J48
(U)SM8J48A
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I2t Limit Value
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
VDRM
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VGM
IGM
Tj
Tstg
JEDEC
JEITA
TOSHIBA
RATING
400
600
8
80 (50Hz)
88 (60Hz)
32
50
5
0.5
10
2
−40~125
−40~125
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
―
―
13-10J2A
Weight: 1.7g
Note 1: VDRM = 0.5×Rated
ITM ≤ 12A
tgw ≥ 10µs
tgr ≤ 250ns
igp = IGT×2.0
1 2001-07-10
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Pages | Pages 5 | ||
Télécharger | [ USM8J48 ] |
No | Description détaillée | Fabricant |
USM8J48 | AC POWER CONTROL APPLICATIONS | Toshiba Semiconductor |
USM8J48A | AC POWER CONTROL APPLICATIONS | Toshiba Semiconductor |
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