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Numéro de référence | D20SB100 | ||
Description | D20SB10 - D20SB100 | ||
Fabricant | LRC | ||
Logo | |||
1 Page
LESHAN RADIO COMPANY LTD.
D20SB10(RBV2002S) Thru D20SB100(RBV2007S)
FEATURES
Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
www.DataSheetT4Uh.icsomseries is UL listed under the Recognized
Component index,file number E231047
Single-in-line package
High current capality with small package
Superior thermal conductivity
High temperature soldering guaranted:
260 /10 seconds
High IFSM
Maximum Ratings & Thermal Characteristics Ratings at 25 ambient temperature unless otherwise specified.
Parameter Symbol
Maximum repetitive voltage
Maximum DC reverse current
at rated DC blocking voltage
TA=25℃
TA=125 ℃
D20SB10 D20SB20 D20SB40 D20SB60 D20SB80 D20SB100
Symbol
Unit
RBV2002S RBV2003S RBV2004S RBV2005S RBV2006S RBV2007S
VRM
100
200
400
600
800 1000 V
5
IR 500 µA
Average rectified forward current 60Hz Sine wave
Resistance load with heat sink Tc=100℃
Io
20 A
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load
IFSM
300
A
Dielectric strength Terminals to case,
AC 1 minute Current 1mA
Vdia
2.5
KV
Maximum instantaneous forward voltage at 10A
Operating junction temperature
Storage temperature
VF
TJ
Tstg
1.1
150
-40~150
V
℃
℃
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Pages | Pages 1 | ||
Télécharger | [ D20SB100 ] |
No | Description détaillée | Fabricant |
D20SB10 | D20SB10 - D20SB100 | LRC |
D20SB10 | Molding Single-Phase Bridge Rectifier | SeCoS |
D20SB100 | D20SB10 - D20SB100 | LRC |
D20SB100 | Molding Single-Phase Bridge Rectifier | SeCoS |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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