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Diotec Semiconductor - (PCT1600A - PCT1600M) Silicon Rectifiers

Numéro de référence PCT1600B
Description (PCT1600A - PCT1600M) Silicon Rectifiers
Fabricant Diotec Semiconductor 
Logo Diotec Semiconductor 





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PCT1600B fiche technique
PCT1600A ... PCT1600M
PCT1600A ... PCT1600M
Silicon Rectifiers – Common Cathode
Silizium-Gleichrichter – Gemeinsame Kathode
Version 2007-07-06
www.DataSheet4U.com
10±0.2
4 3.8
Type
Typ
123
4
1.5 1 2 3
0.9
2.54
Dimensions - Maße [mm]
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
16 A
50...1000 V
TO-220AB
1.8 g
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V] 1)
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V] 1)
PCT1600A
PCT1600B
PCT1600D
PCT1600G
PCT1600J
PCT1600K
PCT1600M
50
100
200
400
600
800
1000
50
100
200
400
600
800
1000
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
VF [V] 1), Tj = 25°C
IF = 5 A
IF = 8 A
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
Max. average forward current, R-load
Dauergrenzstrom mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TC = 100°C
TC = 100°C
f > 15 Hz
IFAV
IFAV
IFRM
TA = 25°C
IFSM
TA = 25°C
i2t
Tj
TS
8 A 1)
16 A 2)
30 A 3)
135/150 A 1)
90 A2s 1)
-50...+150°C
-50...+175°C
1 Per diode – Pro Diode
2 Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
3 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
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