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Numéro de référence | HUR820S | ||
Description | High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode | ||
Fabricant | Sirectifier Semiconductors | ||
Logo | |||
HUR820S
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
C(TAB)
A
A
NC
Dimensions TO-263(D2PAK)
C
www.DataShAe=eAt4nUo.cdoem, NC= No connection, TAB=Cathode
HUR820S
VRSM
V
200
VRRM
V
200
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06
2.03
4.83
2.79
0.51
1.14
0.99
1.40
0.46
1.14
0.74
1.40
8.64
8.00
9.65
8.89
9.65 10.29
6.22 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .008
.018 .029
Symbol
Test Conditions
IFRMS
IFAVM
IFSM
EAS
IAR
TC=150oC; rectangular, d=0.5
TVJ=45oC; tp=10ms (50Hz), sine
TVJ=25oC; non-repetitive; IAS=2A; L=180uH
VA=1.5.VR typ.; f=10kHz; repetitive
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md mounting torque
Weight typical
Maximum Ratings
35
8
80
0.5
0.2
-55...+175
175
-55...+150
60
0.4...0.6
2
Unit
A
A
mJ
A
oC
W
Nm
g
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Pages | Pages 2 | ||
Télécharger | [ HUR820S ] |
No | Description détaillée | Fabricant |
HUR820 | High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode | Sirectifier Semiconductors |
HUR820S | High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode | Sirectifier Semiconductors |
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