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HUR2X30-40 fiches techniques PDF

Sirectifier Semiconductors - High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Numéro de référence HUR2X30-40
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Fabricant Sirectifier Semiconductors 
Logo Sirectifier Semiconductors 





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HUR2X30-40 fiche technique
HUR2x30-40
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
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HUR2x30-40
VRSM
V
400
VRRM
V
400
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min. Max.
31.50
7.80
31.88
8.20
4.09
4.09
4.29
4.29
4.09
14.91
4.29
15.11
30.12
37.80
30.30
38.20
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.72
4.42
4.85
24.59
-0.05
25.07
0.1
3.30
0.780
4.57
0.830
Inches
Min. Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
Symbol
Test Conditions
IFRMS
IFAVM
IFSM
EAS
IAR
TC=105oC; rectangular, d=0.5
TVJ=45oC; tp=10ms (50Hz), sine
TVJ=25oC; non-repetitive; IAS=tbdA; L=tbduH
VA=1.5.VR typ.; f=10kHz; repetitive
TVJ
TVJM
Tstg
Ptot
TC=25oC
VISOL
50/60Hz, RMS
IISOL<_1mA
Md
mounting torque (M4)
terminal connection torque (M4)
Weight typical
Maximum Ratings
100
30
tbd
tbd
tbd
-40...+150
150
-40...+150
100
2500
1.1-1.5/9-13
1.1-1.5/9-13
30
Unit
A
A
mJ
A
oC
W
V~
Nm/lb.in.
g

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