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LH532600 fiches techniques PDF

Sharp Electrionic Components - CMOS 2M (256K x 8/128K x 16) MROM

Numéro de référence LH532600
Description CMOS 2M (256K x 8/128K x 16) MROM
Fabricant Sharp Electrionic Components 
Logo Sharp Electrionic Components 





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LH532600 fiche technique
LH532600
CMOS 2M (256K × 8/128K × 16) MROM
FEATURES
262,144 words × 8 bit organization
(Byte mode)
131,072 words × 16 bit organization
(Word mode)
Access time: 100 ns (MAX.)
Static operation
TTL compatible I/O
Three-state outputs
Single +5 V power supply
Power consumption:
Operating: 412.5 mW (MAX.)
Standby: 550 µW (MAX.)
Mask-programmable control pin:
Pin 1 = OE1/OE1/DC
Packages:
40-pin, 600-mil DIP
40-pin, 525-mil SOP
48-pin, 10 × 20 mm2 TSOP (Type I)
DESCRIPTION
The LH532600 is a 2M-bit mask-programmable ROM
organized as 262,144 × 8 bits (Byte mode) or 131,072
× 16 bits (Word mode) that can be selected by BYTE
input pin. It is fabricated using silicon-gate CMOS proc-
ess technology.
PIN CONNECTIONS
40-PIN DIP
40-PIN SOP
TOP VIEW
OE1/OE1/DC
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
D0
D8
D1
D9
D2
D10
D3
D11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40 A8
39 A9
38 A10
37 A11
36 A12
35 A13
34 A14
33 A15
32 A16
31 BYTE
30 GND
29 D15/A-1 (LSB)
28 D7
27 D14
26 D6
25 D13
24 D5
23 D12
22 D4
21 VCC
532600-1
Figure 1. Pin Connections for DIP and
SOP Packages
1

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