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PDF KMM466S823DT3 Data sheet ( Hoja de datos )
| Número de pieza | KMM466S823DT3 | |
| Descripción | PC66 SODIMM | |
| Fabricantes | Samsung Semiconductor | |
| Logotipo |  |
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KMM466S823DT3
PC66 SODIMM
Revision History
Revision 0.0 (July 5, 1999)
• Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.
• Skip ICC4 value of CL=2 in DC characteristics in datasheet.
• Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
• Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.
• Symbol Change Notice
www.DataSheet4U.com
Before
After
IIL Input leakage current (inputs)
IIL Input leakage current (I/O pins)
ILI Input leakage current
IOL
Output open @ DC characteristic table
Io
Output open @ DC characteristic table
• Test Condition in DC CHARACTERISTIC Change Notice
Symbol
Before
After
ICC2P , ICC3P
ICC2N , ICC3N
ICC4
CKE ≤ VIL(max), tCC = 15ns
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
2 Banks activated
CKE ≤ VIL(max), tCC = 10ns
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
4 Banks activated
• Added Notes @OPERATING AC PARAMETER
Notes : 5. For -0, tRDL=1CLK and tDAL=1CLK+20ns is also supported .
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.
Revision 0.1 (July 29, 1999)
• Changed misprinted "Detail Y" @ PACKAGE DIMENSIONS.
REV. 0.1 July 1999
1 page  
KMM466S823DT3
PC66 SODIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
8
50
www.DataSheeNt4oUt.eco: mPermanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
°C
W
mA
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VDD
3.0
3.3
3.6
V
Input high voltage
VIH
2.0
3.0 VDDQ+0.3
V
Input low voltage
VIL -0.3 0 0.8 V
Output high voltage
VOH
2.4
-
-
V
Output low voltage
VOL -
- 0.4 V
Input leakage current
ILI -10
-
10 uA
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Parameter
Symbol
Min
Input capacitance (A0 ~ A11, BA0 ~ BA1)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
Input capacitance (CLK0 ~ CLK1)
Input capacitance (CS0)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
COUT
23
23
23
15
25
8
9
Max
40
40
40
21
45
10
12
Unit
pF
pF
pF
pF
pF
pF
pF
REV. 0.1 July 1999
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet KMM466S823DT3.PDF ] | |
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