PDF KMM466F203CS2-L Data sheet ( Hoja de datos )

Número de pieza	KMM466F203CS2-L
Descripción	2M X 64 SODIMM
Fabricantes	Samsung Semiconductor
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No Preview Available ! DRAM MODULE KMM466F203CS2-L KMM466F213CS2-L www.DataSheet4U.com 2Mx64 SODIMM (2MX8 Base) Revision 2.0 November 1997 - 1 - Rev. 2.0 (Nov. 1997) 1 page DRAM MODULE KMM466F203CS2-L KMM466F213CS2-L ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative V SS Voltage on VCC supply relative to V SS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC Tstg PD IOS Rating -0.5 to +4.6 -0.5 to +4.6 -55 to +125 8 50 Unit V V °C W mA * Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in tended periods may affect device reliability. www.DataSRheEetC4UO.cMomMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C) Item Symbol Min Typ Max Supply Voltage Ground Input High Voltage Input Low Voltage VCC 3.0 3.3 3.6 VSS 0 0 0 VIH 2.0 - VCC+0.31 VIL -0.32 - 0.8 Unit V V V V 1 : VCC+1.3V at pulse width ≤15ns, which is measured at VCC. 2 : -1.3V at pulse width ≤15ns, which is measured at VSS. DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 ICC7 ICCS II(L) IO(L) VOH VOL Speed -L5 -L6 Don't care -L5 -L6 -L5 -L6 Don't care -L5 -L6 - - Don't care Don't care KMM466F203CS2-L Min Max - 720 - 640 -8 - 720 - 640 - 640 - 560 - 1.6 - 720 - 640 - 2.0 - 1.6 -40 40 -5 5 2.4 - - 0.4 KMM466F213CS2-L Min Max - 880 - 800 -8 - 880 - 800 - 720 - 640 - 1.6 - 880 - 800 - 2.0 - 1.6 -40 40 -5 5 2.4 - - 0.4 Unit mA mA mA mA mA mA mA mA mA mA mA uA uA V V ICC1 : Operating Current * ( RAS, CAS, Address cycling @t RC=min) ICC2 : Standby Current ( RAS=CAS=W=VIH) ICC3 : RAS Only Refresh Current * ( CAS=VIH, RAS cycling @tRC=min) ICC4 : Extended Data Out Mode Current * ( RAS=VIL, CAS cycling : tHPC=min) ICC5 : Standby Current ( RAS=CAS=W=VCC-0.2V) ICC6 : CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @tRC=min) ICC7 : Battery back-up current. Average power supply, Battery back-up mode. Input high voltage(V IH)=VCC-0.2V, Input low voltage(V IL)=0.2V, UCAS,LCAS=0.2V, Din=Don't care, tRC=31.25us(4K/L-ver), 62.5us(2K/L-ver), tRAS=tRASmin~300ns) ICCS : Self Refresh Current ( RAS=UCAS=LCAS=VIL, W=OE=A0~A1=VCC-0.2V or 0.2V, DQ~DQ63=V CC-0.2V or Open) II(L) : Input Leakage Current (Any input 0 ≤VIN≤Vcc+0.3V, all other pins not under test=0 V) IO(L) : Output Leakage Current(Data Out is disabled, 0V ≤VOUT≤VCC) VOH : Output High Voltage Level (I OH = -2mA) VOL : Output Low Voltage Level (I OL = 2mA) * NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In I CC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle, t HPC. - 5 - Rev. 2.0 (Nov. 1997) 5 Page DRAM MODULE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : DOUT = OPEN VIH - RAS VIL - www.DataSheet4U.com VIH - CAS VIL - VIH - A VIL - VIH - W VIL - VIH - OE VIL - VIH - DQ VIL - tRAS tRC tCRP tRCD tRAD tASR tRAH ROW ADDRESS tASC tCSH tRSH tCAS tRAL tCAH COLUMN ADDRESS tCWL tRWL tWP tOED tDS tOEH tDH DATA-IN KMM466F203CS2-L KMM466F213CS2-L tRP tCRP Don′t care Undefined - 11 - Rev. 2.0 (Nov. 1997) 11 Page

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