D882 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Jiangsu Changjiang Electronics - NPN TRANSISTOR

شماره قطعه	D882
شرح مفصل	NPN TRANSISTOR
تولید کننده	Jiangsu Changjiang Electronics
آرم
1 Page No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN FEATURES Power dissipation PCM : 1.25 Collector current www.DataSheet4U.com ICM : 3 Collector-base voltage W Tamb=25 A V(BR)CBO : 40 V Operating and storage junction temperature range TJ Tstg: -55 to +150 TO 126 1. EMITTER 2.COLLECTOR 3.BASE 123 ELECTRICAL CHARACTERISTICS Tamb=25 Parameter Symbol unless otherwise specified Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100 A IE=0 40 V Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CEO V(BR)EBO IC= 10 mA , IB=0 IE= 100 A IC=0 30 6 V V Collector cut-off current ICBO VCB=40 V , IE=0 1A Collector cut-off current Emitter cut-off current ICEO VCE=30 V , IB=0 IEBO VEB=6V , IC=0 10 A 1A DC current gain hFE 1 hFE 2 VCE= 2V, IC= 1A VCE=2V, IC= 100mA 60 32 400 Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.5 V Base-emitter saturation voltage Transition frequency VBE(sat) fT IC=2A, IB= 0.2A VCE=5 V, IC=0.1mA f = 10MHz 50 1.5 V MHz CLASSIFICATION OF hFE(1) Rank R Range 60-120 O 100-200 Y 160-320 GR 200-400
قانون اساسی	صفحه 2
دانلود	[ D882 دیتاشیت ]

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