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Número de pieza | LH52D1000 | |
Descripción | CMOS 1M (128K x 8) Static Ram | |
Fabricantes | Sharp Electrionic Components | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LH52D1000 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! LH52D1000
CMOS 1M (128K × 8) Static Ram
FEATURES
• Access time: 85 ns (MAX.),
100 ns (MAX.)
• Current consumption:
Operating: 40 mA (MAX.)
6 mA (MAX.) (tRC, tWC = 1 µs)
Standby: 45 µA (MAX.)
• Data Retention:
1.0 µA (MAX. VCCDR = 3 V, tA = 25°C)
• Single power supply: 2.7 V to 3.6 V
• Operating temperature: -40°C to +85°C
• Fully-static operation
• Three-state output
• Not designed or rated as radiation
hardened
• Packages:
32-pin 8 × 20 mm2 TSOP
32-pin 8 × 13.4 mm2 STSOP
• N-type bulk silicon
DESCRIPTION
The LH52D1000 is a static RAM organized as
131,072 × 8 bits which provides low-power standby
mode. It is fabricated using silicon-gate CMOS process
technology.
PIN CONNECTIONS
32-PIN TSOP
32-PIN STSOP
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TOP VIEW
32 OE
31 A10
30 CE1
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 GND
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
52D1000S-1
Figure 1. Pin Connections for TSOP
and STSOP Packages
1
1 page CMOS 1M (128K × 8) Static RAM
LH52D1000
DATA RETENTION CHARACTERISTICS (TA = -40°C to +85°C)
PARAMETER
SYMBOL
CONDITIONS
MIN. TYP MAX. UNIT NOTE
Data retention
supply voltage
VCCDR
Data retention
supply current
ICCDR
CE2 ≤ 0.2 V or
CE1 ≥ VCCDR – 0.2 V
VCCDR = 3.0 V
CE2 ≤ 0.2 V or
CE1 ≥ VCCDR – 0.2 V
TA = 25°C
TA = 40°C
2.0
Chip enable
setup time
tCDR
0
Chip enable
hold time
tR
NOTE:
1. CE2 ≥ VCCDR – 0.2 V or CE2 ≤ 0.2 V
2. Typical values at TA = 25°C
5
PIN CAPACITANCE (TA = 25°C, f = 1 MHz)
PARAMETER
SYMBOL CONDITIONS MIN.
TYP.
MAX.
UNIT
3.6 V
1.0
µA
3.0
35
ms
ms
NOTE
1
1
Input capacitance
CIN
VIN = 0 V 10 pF
I/O capacitance
CI/O VI/O = 0 V 10 pF
NOTE:
1. This parameter is sampled and not production tested.
1
1
5
5 Page CMOS 1M (128K × 8) Static RAM
32TSOP (TSOP032-P-0813)
LH52D1000
1
16
11.90 [0.468]
11.70 [0.461]
13.60 [0.535]
13.20 [0.520]
SEE DETAIL
32
0.22 [0.009]
0.50 [0.020]
17 0.25 [0.010]
TYP.
0.15 [0.006]
0.05 [0.002]
1.10 [0.043]
0.90 [0.035]
1.20 [0.047]
MAX.
DETAIL
DIMENSIONS IN MM [INCHES]
MAXIMUM LIMIT
MINIMUM LIMIT
0.20 [0.008]
0.90 [0.003]
0° - 10°
0.60 [0.024]
0.40 [0.016]
32STSOP
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet LH52D1000.PDF ] |
Número de pieza | Descripción | Fabricantes |
LH52D1000 | CMOS 1M (128K x 8) Static Ram | Sharp Electrionic Components |
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