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SDT116 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Sirectifier Semiconductors - Thyristor-Diode Modules

شماره قطعه SDT116
شرح مفصل Thyristor-Diode Modules
تولید کننده Sirectifier Semiconductors 
آرم Sirectifier Semiconductors 


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SDT116 شرح
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STD/SDT116
Thyristor-Diode Modules, Diode-Thyristor Modules
Type
VRSM
VDSM
V
STD/SDT116GK08 900
STD/SDT116GK12 1300
STD/SDT116GK14 1500
STD/SDT116GK16 1700
STD/SDT116GK18 1900
VRRM
VDRM
V
800
1200
1400
1600
1800
Dimensions in mm (1mm=0.0394")
Symbol
Test Conditions
I , ITRMS FRMS TVJ=TVJM
I , ITAVM FAVM TC=85oC; 180o sine
TVJ=45oC
ITSM, IFSM
VR=0
TVJ=TVJM
VR=0
TVJ=45oC
i2dt
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
(di/dt)cr
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.45A
diG/dt=0.45A/us
repetitive, IT=250A
non repetitive, IT=ITAVM
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
PGM
TVJ=TVJM
IT=ITAVM
tp=30us
tp=300us
PGAV
VRGM
TVJ
TVJM
Tstg
VISOL
50/60Hz, RMS
IISOL<_1mA
t=1min
t=1s
Md
Mounting torque (M5)
Terminal connection torque (M5)
Weight Typical including screws
Maximum Ratings
180
116
2250
2400
2000
2150
25300
23900
20000
19100
150
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
3000
3600
2.5-4.0/22-35
2.5-4.0/22-35
90
Unit
A
A
A2s
A/us
V/us
W
W
V
oC
V~
Nm/lb.in.
g

قانون اساسیصفحه 4
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