|
|
Numéro de référence | BES-516-356-S4-W | ||
Description | Inductive Sensors | ||
Fabricant | Balluff | ||
Logo | |||
1 Page
www.DataSheet4U.com
Inductive Sensors
BES 516-356-S 4-W
M12x1 x 61
normally-open
Sn=4mm
unshielded
magnetic field immune
Common Data
Mounting in steel
Rated operating distance Sn
Assured operating distance Sa
Repeatability R
Hysteresis
Function indication
Ambient temperature range
Polution Degree
IEC-Code
Time delay before availability
Particular characteristics
unshielded
4mm
0...3.2mm
<= 5%
1...15%
yes
-25...+70°C
3
I2A12AP2
<= 60ms
magnetic field immune
Mechanical Data
Measurements BxHxT or DxT
M12x1 x 61mm
Housing material
brass, PTFE coated
Material of sensing face
LCP PTFE-coated
Degree of protection
IP67IP
Connection
Connector S4
Schock: Halfsinus, 30 gn, 11ms
Vibration: 55 Hz, 1mm Amplitude, 3 x 30 Minutes
Electrical Data
Current type
Wiring
switching function
Output signal
Rated opertional voltage
Rated opertional current
Supply voltage
Ripple
max. switching frequency
No-load supply current
Off-state current
Voltage drop
Short circuit protection
Protected against polarity reversal
DC
3-Wire
normally-open
PNP
24 DCV
200mA
10...30 DCV
<= 10%
1000Hz
<= 20/<= 15mA
<= 80µA
<= 2.5/-V
yes
yes
Utilization categories
Insulation class
DC 13
II
Datasheet number:
Definitions see general catalog.
If not otherwise noted, ratings according to
IEC 60947-5-2 (DIN EN60947-5-2)
Balluff GmbH
P.O.Box 1160
73761 Neuhausen Germany
Phone (07158) 173-0 Fax (07158) 5010
Datenblatt by CD-ROM - 10/2004
|
|||
Pages | Pages 1 | ||
Télécharger | [ BES-516-356-S4-W ] |
No | Description détaillée | Fabricant |
BES-516-356-S4-W | Inductive Sensors | Balluff |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |