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Número de pieza | HAT2199R | |
Descripción | Silicon N Channel Power MOS FET Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAT2199R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! HAT2199R
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
www.DataSheet•4U.cLoomw drive current
• High density mounting
• Low on-resistance
RDS(on) = 13.0 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
8 7 65
1 234
4
G
56 7 8
DD D D
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
REJ03G0063-0300
Rev.3.00
Sep.23.2004
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
11
88
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-a Note3
11
11
12.1
2.0
62.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.3.00, Sep.23.2004, page 1 of 7
1 page HAT2199R
Reverse Drain Current vs.
Source to Drain Voltage
10
8 10 V
5V
6
VGS = 0 V
4
www.DataSheet4U.com
2
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
IAP = 11 A
16 VDD = 15 V
duty < 0.1 %
Rg > 50 Ω
12
8
4
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.1
0.01
0.001
0.5
0.2
0.1
0.05
0.02
0.01 1shot pulse
0.0001
10 µ
100 µ
1m
θch - f(t) = γs (t) x θch - f
θch - f = 100°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (s)
100 1000 10000
Rev.3.00, Sep.23.2004, page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HAT2199R.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAT2199R | Silicon N Channel Power MOS FET Power Switching | Renesas Technology |
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