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What is HAT2189WP?

This electronic component, produced by the manufacturer "Renesas Technology", performs the same function as "Silicon N Channel Power MOS FET Power Switching".


HAT2189WP Datasheet PDF - Renesas Technology

Part Number HAT2189WP
Description Silicon N Channel Power MOS FET Power Switching
Manufacturers Renesas Technology 
Logo Renesas Technology Logo 


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HAT2189WP
Silicon N Channel Power MOS FET
Power Switching
Features
Low on-resistance
Low drive current
www.DataSheet4U.cHoimgh density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
D DDD
5 678
4
G
4 32 1
S SS
1 23
REJ03G1251-0100
Rev.1.00
Aug.24,2005
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
8.5
17
8.5
17
8.5
4.8
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.1.00, Aug.24.2005, page 1 of 3


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HAT2189WP electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
HAT2189WPThe function is Silicon N Channel Power MOS FET Power Switching. Renesas TechnologyRenesas Technology

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