(PDF) HAT2119H Datasheet - Silicon N Channel Power MOS FET Power Switching

Número de pieza	HAT2119H
Descripción	Silicon N Channel Power MOS FET Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! HAT2119H Silicon N Channel MOS FET High Speed Power Switching Features • Low drive current. • Low on-resistance www.DataSheet•4U.cLoomw profile Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK ) 5 1 234 4 G 5 D S SS 1 23 REJ03G0176-0300 Rev.3.00 Dec 19, 2006 1, 2, 3 4 5 Source Gate Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) Note1 IDR IDR(pulse) Note1 IAP Note3 EAR Note3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 5 20 5 20 5 1.5 20 6.25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.3.00 Dec 19, 2006 page 1 of 3 1 page

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PDF HAT2119H Data sheet ( Hoja de datos )