(PDF) HAT2116H Datasheet - Silicon N Channel Power MOS FET Power Switching

Número de pieza	HAT2116H
Descripción	Silicon N Channel Power MOS FET Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! HAT2116H Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive www.DataSheet•4U.cLoomw drive current • High density mounting • Low on-resistance RDS (on) = 6.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1234 4 G 5 D S SS 1 23 REJ03G1189-0400 (Previous: ADE-208-1575B) Rev.4.00 Sep 07, 2005 1, 2, 3 4 5 Source Gate Drain Rev.4.00 Sep 07, 2005 page 1 of 6 1 page HAT2116H www.DataSheet4U.com Reverse Drain Current vs. Source to Drain Voltage 50 10 V 40 5V Pulse Test 30 VGS = 0 20 10 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 0.01 0.01 10 µ 1shot pulse 100 µ θch – c (t) = γ s (t) • θch – c θch – c = 8.33°C/W, Tc = 25°C PDM D = PW T PW T 1m 10 m 100 m Pulse Width PW (S) 1 10 Switching Time Test Circuit Switching Time Waveform Vin Monitor Rg D.U.T. Vout Monitor RL Vin 10 V VDS = 10 V Vin Vout 10% 10% td(on) 90% tr 90% 90% td(off) 10% tf Rev.4.00 Sep 07, 2005 page 5 of 6 5 Page

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PDF HAT2116H Data sheet ( Hoja de datos )