|
|
Numéro de référence | HAT2099H | ||
Description | Silicon N Channel Power MOS FET Power Switching | ||
Fabricant | Renesas Technology | ||
Logo | |||
1 Page
HAT2099H
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 4.5 V gate drive
www.DataSheet•4U.cLoomw drive current
• High density mounting
• Low on-resistance
RDS (on) = 2.9 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1234
4
G
5
D
S SS
1 23
REJ03G1187-0500
(Previous: ADE-208-1432C)
Rev.5.00
Sep 07, 2005
1, 2, 3
4
5
Source
Gate
Drain
Rev.5.00 Sep 07, 2005 page 1 of 7
|
|||
Pages | Pages 8 | ||
Télécharger | [ HAT2099H ] |
No | Description détaillée | Fabricant |
HAT2099H | Silicon N Channel Power MOS FET Power Switching | Renesas Technology |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |