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Renesas Technology - Silicon N Channel Power MOS FET Power Switching

Numéro de référence HAT2099H
Description Silicon N Channel Power MOS FET Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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HAT2099H fiche technique
HAT2099H
Silicon N Channel Power MOS FET
Power Switching
Features
Capable of 4.5 V gate drive
www.DataSheet4U.cLoomw drive current
High density mounting
Low on-resistance
RDS (on) = 2.9 mtyp. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1234
4
G
5
D
S SS
1 23
REJ03G1187-0500
(Previous: ADE-208-1432C)
Rev.5.00
Sep 07, 2005
1, 2, 3
4
5
Source
Gate
Drain
Rev.5.00 Sep 07, 2005 page 1 of 7

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