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Número de pieza | HAT2092R | |
Descripción | Silicon N Channel Power MOS FET Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAT2092R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! HAT2092R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
www.DataSheet•4U.cCoampable of 4.5 V gate drive
• Low drive current
• High density mounting
Outline
SOP-8
8 7 65
1 234
78
DD
24
GG
S1
MOS1
56
DD
S3
MOS2
REJ03G0511-0300
(Previous ADE-208-1236A(Z))
Rev.3.00
Jan.13.2005
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
11
88
Body–drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch Note3
11
2
3
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.3.00 Jan. 13, 2005 page 1 of 7
1 page HAT2092R
www.DataSheet4U.com
Reverse Drain Current vs.
Source to Drain Voltage
50
40 10 V
5 V VGS = 0
30
20
10
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.1
0.01
0.001
0.05
0.02
0.01
1shot pulse
θ ch - f(t) = γs (t) x θch - f
θ ch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
0.0001
10 µ 100 µ 1 m 10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
1shot pulse
0.0001
10 µ
100 µ
1m
θ ch - f(t) = γs (t) x θch - f
θ ch - f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Rev.3.00 Jan. 13, 2005 page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HAT2092R.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAT2092R | Silicon N Channel Power MOS FET Power Switching | Renesas Technology |
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