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PDF HAT2085T Data sheet ( Hoja de datos )

Número de pieza HAT2085T
Descripción Silicon N Channel Power MOS FET Power Switching
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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No Preview Available ! HAT2085T Hoja de datos, Descripción, Manual

HAT2085T
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low drive current
www.DataSheet4U.cHoimgh density mounting
Outline
RENESAS Package code: PTSP0008JB-B
(Package name: TSSOP-8 <TTP-8DV> )
8765
1234
4G
5 6 78
D D DD
SSS
123
REJ03G0163-0500
Rev.5.00
Nov 27, 2007
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch Note 2
200
±30
1.4
11.2
1.4
1.3
Channel temperature
Tch 150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
Page 1 of 6

1 page




HAT2085T pdf
HAT2085T
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
8
6
www.DataSheet4U.com
4
10 V
2 5V
VGS = 0
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
5
ID = 10 mA
4 1 mA
3
0.1 mA
2
1
VDS = 10 V
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
1shot pulse
θch – f (t) = γ s (t) • θch – f
θch – f = 139°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PDM
D = PW
T
PW
T
0.0001
10 µ 100 µ 1 m 10 m 100 m
1
10 100 1000 10000
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
10
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDD
= 100 V
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
REJ03G0163-0500 Rev.5.00 Nov 27, 2007
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