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PDF HAT1139H Data sheet ( Hoja de datos )
| Número de pieza | HAT1139H | |
| Descripción | Silicon P Channel Power MOS FET Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAT1139H (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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HAT1139H
Silicon P Channel Power MOS FET
Power Switching
Features
• Capable of –4.5 V gate drive
• Low drive current
www.DataSheet•4U.cHoimgh density mounting
• Low on-resistance
RDS(on) = 7.0 mΩ typ. (at VGS = –10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
5D
1 234
2
G
3
G
S
1
5
D
S
4
REJ03G1244-0200
Rev.2.00
Jun.22.2005
1, 4 Source
2, 3 Gate
5 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation : Tc = 25°C
3. 2 Drive operation : Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Pch Note3
Tch
Tstg
Ratings
–30
–25 / +20
–30
–120
–30
15
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.2.00 Jun. 22, 2005, page 1 of 6
1 page  
HAT1139H
www.DataSheet4U.com
10
Reverse Drain Current vs.
Source to Drain Voltage
–50
–40
–10 V
–30
–5 V
–20
VGS = 0 V, 5 V
–10
Pulse Test
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01 0.01
1shot pulse
0.001
10 µ
100 µ
1m
θ ch - c(t) = γs (t) •· θch - c
θ ch - c = 8.33°C/ W, Tc = 25°C
PDM
PW
T
10 m 100 m 1
10
Pulse Width PW (s)
100
D=
PW
T
1000 10000
Switching Time Test Circuit
Vin Monitor
4.7 Ω
Vin
-10 V
D.U.T.
Vout
Monitor
RL
VDD
= -10 V
Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.2.00 Jun. 22, 2005, page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HAT1139H.PDF ] | |
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