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Renesas Technology - Silicon P Channel Power MOS FET Power Switching

Numéro de référence HAT1126R
Description Silicon P Channel Power MOS FET Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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HAT1126R fiche technique
HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 4.5 V gate drive
www.DataSheet4U.cHoimgh density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
SOP-8
78
DD
56
DD
24
GG
S1
MOS1
S3
MOS2
8 7 65
1 234
REJ03G0406-0100
Rev.1.00
Sep.10.2004
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
HAT1126R
HAT1126RJ
Drain to source voltage
Gate to source voltage
VDSS
VGSS
–60
±20
–60
±20
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
ID
ID (pulse)Note1
IAPNote4
EARNote4
PchNote2
PchNote3
–6.0
–48
2
3
–6.0
–48
–6.0
3.08
2
3
Channel temperature
Tch 150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW 10µs, duty cycle 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
4. Value at Tch = 25°C, Rg 50
(Ta = 25°C)
Unit
V
V
A
A
A
mJ
W
W
°C
°C
Rev.1.00 Sep. 10, 2004 page 1 of 7

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