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Renesas Technology - Silicon P Channel Power MOS FET Power Switching

Numéro de référence HAT1111C
Description Silicon P Channel Power MOS FET Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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HAT1111C fiche technique
HAT1111C
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 245 mtyp. (at VGS = –10 V)
www.DataSheet4U.cLoomw drive current.
4.5 V gate drive devices.
High density mounting
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
234 5
DDD D
Index
band
5
4
6
3
2
1
6
G
S
1
REJ03G0446-0600
Rev.6.00
May 19.2005
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
VDSS
–60
Gate to Source voltage
VGSS
–20 / +10
Drain current
Drain peak current
ID
ID (pulse)Note1
–2
–8
Body - Drain diode reverse drain current
Channel dissipation
IDR
PchNote 2
–2
1.25
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), PW 5 s, Ta = 25°C
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.6.00 May 19, 2005 page 1 of 6

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