|
|
Número de pieza | HAT1110R | |
Descripción | Silicon P Channel Power MOS FET Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAT1110R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! HAT1110R
Silicon P Channel Power MOS FET
Power Switching
Features
• Capable of –4.5 V gate drive
• Low drive current
www.DataSheet•4U.cHoimgh density mounting
Outline
SOP-8
78
DD
24
GG
56
DD
S1
MOS1
S3
MOS2
8 7 65
1 234
REJ03G0416-0200
Rev.2.00
Oct.07.2004
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
–80
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
–1
–6
Reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch Note3
–1
1.2
1.8
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.2.00, Oct.07.2004, page 1 of 7
1 page HAT1110R
www.DataSheet4U.com
Reverse Drain Current vs.
Source to Drain Voltage
–2.5
Pulse Test
–2.0
–1.5
–1.0
–0.5
–10 V
–5 V
VGS = 0V, 5 V
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1shot
pulse
θch - f(t) = γs (t) x θch - f
θch - f = 180°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
D=
PW
T
T
0.001
10 µ 100 µ 1 m 10 m 100 m 1
10 100 1000 10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1shot pulse
θch - f(t) = γs (t) x θch - f
θch - f = 230°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
D=
PW
T
T
0.001
10 µ 100 µ 1 m 10 m 100 m 1
10 100 1000 10000
Pulse Width PW (S)
Rev.2.00, Oct.07.2007, page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HAT1110R.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAT1110R | Silicon P Channel Power MOS FET Power Switching | Renesas Technology |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |