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Renesas Technology - Silicon P Channel Power MOS FET Power Switching

Numéro de référence HAT1108C
Description Silicon P Channel Power MOS FET Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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HAT1108C fiche technique
HAT1108C
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 155 mtyp. (at VGS = –10 V)
www.DataSheet4U.cLoomw drive current.
4.5 V gate drive devices.
High density mounting
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband 5 4
6
3
2
1
REJ03G1234-0500
Rev.5.00
Aug 30, 2006
2 34 5
DDD D
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
VDSS
–30
Gate to Source voltage
VGSS
–20 / +10
Drain current
Drain peak current
ID
ID (pulse)Note1
–1.5
–6
Body - Drain diode reverse drain current
Channel dissipation
IDR
PchNote 2
–1.5
830
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Rev.5.00, Aug 30, 2006 page 1 of 6

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