DataSheetWiki


HAT1096C fiches techniques PDF

Renesas Technology - Silicon P Channel Power MOS FET Power Switching

Numéro de référence HAT1096C
Description Silicon P Channel Power MOS FET Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





1 Page

No Preview Available !





HAT1096C fiche technique
HAT1096C
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 225 mtyp. (at VGS = –4.5 V)
www.DataSheet4U.cLoomw drive current.
2.5 V gate drive devices.
High density mounting
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband 5 4
6
3
2
1
REJ03G1233-0400
Rev.4.00
Jan 26, 2006
2 34 5
D DD D
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
Gate to Source voltage
VDSS
VGSS
–20
±12
Drain current
Drain peak current
ID
ID (pulse)Note1
–1
–4
Body - Drain diode reverse drain current
Channel dissipation
IDR
PchNote 2
–1
790
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Rev.4.00 Jan 26, 2006 page 1 of 6

PagesPages 7
Télécharger [ HAT1096C ]


Fiche technique recommandé

No Description détaillée Fabricant
HAT1096C Silicon P Channel Power MOS FET Power Switching Renesas Technology
Renesas Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche