(PDF) HAT1065R Datasheet - Silicon P Channel Power MOS FET Power Switching

Número de pieza	HAT1065R
Descripción	Silicon P Channel Power MOS FET Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! HAT1065R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate drive www.DataSheet•4U.cHoimgh density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 8 7 65 1 234 2 G 78 DD 4 G S1 MOS1 56 DD S3 MOS2 REJ03G0579-0200 Rev.2.00 Apr 04, 2006 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS –200 Gate to source voltage VGSS ±15 Drain current Drain peak current ID ID(pulse)Note1 –0.25 –1 Body-drain diode reverse drain current Channel dissipation IDR Pch Note2 Pch Note3 –0.25 1.3 2 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W W °C °C Rev.2.00 Apr 04, 2006 page 1 of 3 1 page

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PDF HAT1065R Data sheet ( Hoja de datos )