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PDF HAT1054R Data sheet ( Hoja de datos )
| Número de pieza | HAT1054R | |
| Descripción | Silicon P Channel Power MOS FET Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAT1054R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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HAT1054R
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
www.DataSheet•4U.cCoampable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
78
DD
56
DD
87 65
1 234
24
GG
S1
MOS1
S3
MOS2
REJ03G1154-0300
(Previous: ADE-208-1224A)
Rev.3.00
Sep 07, 2005
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Rev.3.00 Sep 07, 2005 page 1 of 7
1 page  
HAT1054R
www.DataSheet4U.com
Switching Characteristics
500
tf
200
100
td(off)
50 tr
20 td(on)
10 VGS = –4.5 V, VDS = –10 V
Rg = 4.7 Ω, duty ≤ 1 %
5
–0.2 –0.5 –1 –2 –5
–10
Drain Current ID (A)
–20
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
1shot pulse
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PDM
D=
PW
T
PW
T
0.0001
10 µ 100 µ
1m
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
1shot pulse
0.0001
10 µ 100 µ
1m
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PDM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Rev.3.00 Sep 07, 2005 page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HAT1054R.PDF ] | |
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