(PDF) H7N0602AB Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	H7N0602AB
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! H7N0602AB Silicon N Channel MOS FET High Speed Power Switching www.DataSheet4U.com Features • Low on-resistance RDS(on) = 4.1 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB REJ03G0068-0200Z Rev.2.00 Oct.30.2003 D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 1 page H7N0602AB Drain to Source Saturation Voltage vs. Gate to Source Voltage 500 Pulse Test 400 www.DataSheet4U.com 300 200 ID = 50 A 100 20 A 10 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 30 10 VGS = 4.5 V 3 10 V 1 1 3 10 30 100 300 1000 Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 12 50 A 10, 20 A 8 4.5 V 4 10, 20, 50 A VGS = 10 V 0 –50 0 50 100 150 200 Case Temperature Tc (°C) 1000 300 Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test Tc = –25°C 100 25°C 30 75°C 10 3 1 1 3 10 30 100 300 1000 Drain Current ID (A) Rev.2.00, Oct.30.2003, page 5 of 9 5 Page

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PDF H7N0602AB Data sheet ( Hoja de datos )