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Renesas Technology - Silicon N Channel MOS FET High Speed Power Switching

Numéro de référence H7N0401LM
Description Silicon N Channel MOS FET High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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H7N0401LM fiche technique
H7N0401LD, H7N0401LS, H7N0401LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1129-0500
(Previous: ADE-208-1527C)
Rev.5.00
Apr 07, 2006
Features
Low on-resistance
www.DataSheet4U.cRoDmS (on) = 3.1 mtyp.
4.5 V gate drive devices
High Speed Switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N0401LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
H7N0401LS
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H7N0401LM
S
Rev.5.00 Apr 07, 2006 page 1 of 8

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