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PDF H5N5016PL Data sheet ( Hoja de datos )

Número de pieza H5N5016PL
Descripción Silicon N Channel MOS FET High Speed Power Switching
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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No Preview Available ! H5N5016PL Hoja de datos, Descripción, Manual

H5N5016PL
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
www.DataSheet4U.cHoimgh speed switching
Built-in fast recovery diode
Outline
TO-3PL
D
REJ03G0175-0200Z
Rev.2.00
Jul.02.2004
G
S
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case Thermal Impedance
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
PchNote 2
θch-c
Tch
Tstg
Ratings
500
±30
50
200
50
200
10
5.5
250
0.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C /W
°C
°C
Rev.2.00, Jul.02.2004, page 1 of 6

1 page




H5N5016PL pdf
H5N5016PL
www.DataSheet4U.com
Reverse Drain Current vs.
Source to Drain Voltage
100
80
60
40
5V
V GS = 0 V
20
10 V
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
6
VDS = 10 V
5
4
3 ID = 10mA
2
1mA
1
0.1mA
0
-50 0
50 100 150 200
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 µ 100 µ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 0.5°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 250 V
Waveform
Vin 10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
Rev.2.00, Jul.02.2004, page 5 of 6

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