|
|
PDF H5N2517FN Data sheet ( Hoja de datos )
| Número de pieza | H5N2517FN | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de H5N2517FN (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
H5N2517FN
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
www.DataSheet•4U.cHoimgh speed switching
Outline
TO-220FN
D
G
S
REJ03G0371-0100Z
Rev.1.00
May.28.2004
1. Gate
2. Drain
3. Source
1
23
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
250
±30
20
80
20
80
7
3.0
30
4.17
150
–55 to +150
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
(Ta = 25°C)
Unit
Rev.1.00, May.28.2004, page 1 of 7
1 page  
H5N2517FN
Reverse Drain Current vs.
Source to Drain Voltage
100
80
60
VGS = 0 V
40
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
4 ID = 10mA
3
1mA
2 0.1mA
www.DataSheet4U.com
20 10 V
5V
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
1
0
-50 0
50 100 150 200
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
0.01
0.003
0.001
10 µ
100 µ
Tc = 25°C
θch – c(t) = γ s (t) • θ ch – c
θch – c = 4.17°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Rev.1.00, May.28.2004, page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet H5N2517FN.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| H5N2517FN | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |