(PDF) H5N2514P Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	H5N2514P
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! H5N2514P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current www.DataSheet•4U.cHoimgh speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G S 1 2 3 REJ03G1203-0100 Rev.1.00 May 25.2005 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 70 210 70 210 35 76.5 200 0.625 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.1.00 May 25.2005 page 1 of 3 1 page

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PDF H5N2514P Data sheet ( Hoja de datos )