(PDF) H5N2513PL Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	H5N2513PL
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! H5N2513PL Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching www.DataSheet•4U.cBoumilt-in fast recovery diode Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) G 1 2 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAP Note3 EAR Note3 Pch Note2 θch-c Tch Tstg REJ03G1243-0100 Rev.1.00 Jul 25, 2008 D 1. Gate 2. Drain (Flange) 3. Source S Ratings 250 ±30 100 400 100 400 100 625 250 0.5 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C REJ03G1243-0100 Rev.1.00 Jul 25, 2008 Page 1 of 3 1 page

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