|
|
Numéro de référence | H5N2510DS | ||
Description | Silicon N Channel MOS FET High Speed Power Switching | ||
Fabricant | Renesas Technology | ||
Logo | |||
1 Page
H5N2510DL, H5N2510DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
www.DataSheet•4U.cLoomw drive current
• High speed switching
REJ03G1110-0200
(Previous: ADE-208-1379)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 4
|
|||
Pages | Pages 5 | ||
Télécharger | [ H5N2510DS ] |
No | Description détaillée | Fabricant |
H5N2510DL | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H5N2510DS | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |