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Renesas Technology - Silicon N Channel MOS FET High Speed Power Switching

Numéro de référence H5N2510DS
Description Silicon N Channel MOS FET High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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H5N2510DS fiche technique
H5N2510DL, H5N2510DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
www.DataSheet4U.cLoomw drive current
High speed switching
REJ03G1110-0200
(Previous: ADE-208-1379)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 4

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