(PDF) H5N2502CF Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	H5N2502CF
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! H5N2502CF Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current www.DataSheet•4U.cHoimgh Speed Switching Outline TO-220CFM D G REJ03G0480-0100 Rev.1.00 Nov.26.2004 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) Note 1 IDR IDR(pulse) Note 1 IAP Note 3 Pch Note 2 θch-c Tch Tstg Ratings 250 ±30 18 72 18 72 18 35 3.57 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A W °C/W °C °C Rev.1.00, Nov.26.2004, page 1 of 3 1 page

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