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Número de pieza | H5N2306PF | |
Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de H5N2306PF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! H5N2306PF
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
www.DataSheet•4U.cHoimgh speed switching
Outline
TO-3PFM
D
G
S
REJ03G0031-0200Z
Rev.2.00
Jun.25.2004
123
1. Gate
2. Drain
3. Source
Rev.2.00, Jun.25.2004, page 1 of 9
1 page H5N2306PF
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2
Pulse Test
1.6
I D = 30 A
1.2
www.DataSheet4U.com
0.8
15 A
0.4
5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
VGS = 10 V,15V
0.3
0.1
0.03
0.01
1
2 10 20 100 300 1000
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature
0.2
Pulse Test
VGS = 10 V
0.16
0.12
0.08
0.04
ID = 30 A
15 A
5A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
50 Tc = –25°C
20
10 25°C
5
2 75°C
1
0.5
0.2
V DS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100 300 1000
Drain Current ID (A)
Rev.2.00, Jun.25.2004, page 5 of 9
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet H5N2306PF.PDF ] |
Número de pieza | Descripción | Fabricantes |
H5N2306PF | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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