H5N2004DS Datasheet PDF - Renesas Technology
| Part Number | H5N2004DS | |
| Description | Silicon N Channel MOS FET High Speed Power Switching | |
| Manufacturers | Renesas Technology | |
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There is a preview and H5N2004DS download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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H5N2004DL, H5N2004DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance: R DS (on) = 0.38 Ω typ.
www.DataSheet•4U.cLoomw leakage current: IDSS = 1 µA max (at VDS = 200 V)
• High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)
• Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A)
• Avalanche ratings
REJ03G1103-0200
(Previous: ADE-208-1372)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7
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H5N2004DL, H5N2004DS
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
8
6
4
10 V
2 5V
VGS = 0 V
www.DataSheet4U.com
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
ID = 10 mA
4 1 mA
3
0.1 mA
2
1
VDS = 10 V
0
–50 0
50
100 150 200
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 100 V
Waveform
Vin
Vout
10%
10%
90%
td(on)
tr
90%
90%
td(off)
10%
tf
Rev.2.00 Sep 07, 2005 page 5 of 7
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H5N2004DS electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ H5N2004DS.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| H5N2004DL | The function is Silicon N Channel MOS FET High Speed Power Switching. Renesas Technology | |
| H5N2004DS | The function is Silicon N Channel MOS FET High Speed Power Switching. Renesas Technology | |
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