DataSheetWiki


H5N2003P fiches techniques PDF

Renesas Technology - Silicon N Channel MOS FET High Speed Power Switching

Numéro de référence H5N2003P
Description Silicon N Channel MOS FET High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





1 Page

No Preview Available !





H5N2003P fiche technique
H5N2003P
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
www.DataSheet4U.comHigh speed switching
Outline
TO-3P
D
G
S
1
2
3
REJ03G0235-0100Z
Rev.1.00
Apr.09.2004
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
60
240
60
240
40
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
(Ta = 25°C)
Rev.1.00, Apr.09.2004, page 1 of 6

PagesPages 7
Télécharger [ H5N2003P ]


Fiche technique recommandé

No Description détaillée Fabricant
H5N2003P Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
Renesas Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche