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PDF BCR6AM Data sheet ( Hoja de datos )
| Número de pieza | BCR6AM | |
| Descripción | MEDIUM POWER USE NON-INSULATED TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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Hay una vista previa y un enlace de descarga de BCR6AM (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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BCR6AM
www.DataSheet4U.com
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR6AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
4
Dimensions
in mm
4.5
1.3
TYPE
NAME
VOLTAGE
CLASS
∗
φ3.6±0.2
1.0
0.8
2.5 2.5 0.5 2.6
• IT (RMS) ........................................................................ 6A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5
1 2 3 ∗ Measurement point of
case temperature
24
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1 4 T2 TERMINAL
TO-220
APPLICATION
Contactless AC switches, light drimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · washing machine · infrared kotatsu · carpet ·
electric fan,
solenoid drivers, small motor control, copying machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=103°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
6
60
15
5
0.5
10
2
–40 ~ +120
–40 ~ +125
2.0
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999
1 page  
www.DataSheet4U.com
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR6AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140 Tj = 125°C
120
100
80
60 III QUADRANT
40
I QUADRANT
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7 IFGT I
5
4 IRGT I
3 IRGT III
2
102
7
5
4
3
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
COMMUTATION CHARACTERISTICS
102
TYPICAL
7 EXAMPLE
5
4
TC = 125°C
3 IT = 4A
τ = 500µs
2 VD = 200V
f = 3Hz
101
7
5 MINIMUM
4 CHARAC-
I QUADRANT
3 TERISTICS
2 VALUE
III QUADRANT
100
100 2 3 4 5 7 101 2 3 4 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V A
V RG
TEST PROCEDURE 3
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BCR6AM.PDF ] | |
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